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(approximately 2% increase) (approximately 78% decrease) The enhanced switching characteristics of the SiC MOSFETs are largely related to the significant reduction in switching losses. Although IGBTs can achieve high withstand voltage and low on-resistance, they have tail current issues to factor in. In contrast, SiC MOSFETs realize high withstand voltages, low on-resistance and high-speed switching characteristics due to the endemic characteristics of SiC (and its wide bandgap properties). Unlike IGBTs, the device structure does not generate tail current, meaning that switching losses can be kept low. Turn-on switching loss. The rise of I C /I D at turn-on is slightly faster for SiC MOSFETs, but the time required for convergence to the set condition of 10A is overwhelmingly faster for SiC MOSFETs. It takes time for the IGBT to converge, with energy being lost during that time. The current that flows during turn-on includes the recovery current of the diode (whether it is external or built-in) between the collector/drain and the emitter/source, so the recovery characteristics of the diode will have an effect. There is a big difference in the I C /I D fall characteristics at turn-off. Aposta do bets online.Também é importante fazer sua pesquisa e ler as avaliações de outros jogadores antes de se inscrever.
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