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Find articles by Baosheng Ying. Find articles by Congjin Ye. Find articles by Yuanjin Zhang. 1 School of Automobile and Traffic Engineering, Wuhan University of Science and Technology, Wuhan 430081, China; nc.ude.tsuw@060407328102 (X.L.); nc.ude.tsuw@gnaygnehsoab (B.Y.) Received 2020 Jul 5; Accepted 2020 Jul 24. With the trend of high integration and high power of insulated gate bipolar transistor (IGBT) components, strict requirements have been placed on the heat dissipation capabilities of the IGBT devices. On the basis of traditional rectangular fins, this paper developed two new types of heat-dissipating fins to meet the high requirements of heat dissipation for the IGBT devices. One is the rectangular radiator with a groove length of 2.5 mm and a width of 0.85 mm, the other is the arc radiator with the angle of 125 arc angle, 0.8 mm arc height, and 1.4 mm circle radius. After theoretically calculating the IGBT junction temperature, numerical simulations have been implemented to verify the theoretical result. The commercial CFD software, STAR-CCM+, was employed to simulate the heat dissipation characteristics of the IGBT module under different wind speeds, power, and fin structures. By analyzing the temperature field and vector field of the IGBT module, the analysis results demonstrate that the error between the simulation result and the theoretical calculation is within 5%, which proves the feasibility of the newly designed heat-dissipating fins. When the wind speed is 12.5 m/s, the power is 110 W, the fin height is 31.2 mm, and the fin thickness is 2.3 mm, the rectangular radiator can achieve the best heat dissipation performance. IGBT is a new type of power semiconductor component that combines the high input impedance of the metal-oxide-semiconductor field-effect transistor (MOSFET) with the low on-state voltage drop of the giant transistor (GTR) [6,7].
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